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Distribution of deep levels in Si:Au by spectral analysis of deep-level transient spectroscopy

✍ Scribed by J. Yoshino; Y. Okamoto; J. Morimoto; T. Miyakawa

Publisher
Springer
Year
1998
Tongue
English
Weight
106 KB
Volume
66
Category
Article
ISSN
1432-0630

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Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot