Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy
β Scribed by Vl. Kolkovsky; L. Dobaczewski; K. Bonde Nielsen; V. Kolkovsky; A. Nylandsted Larsen; J. Weber
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 218 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an
A new technique is used to obtain the activation energies and capture cross-sections of closely spaced traps. It is applied to single~rystal p-type CuInSe2 prepared by the vertical Bridgeman method and selenium~loped AlxGal-xAs (x = 0.27) grown by metal-organic chemical vapor deposition. Deep center