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Acousto-electric deep-level transient spectroscopy in semiconductors

✍ Scribed by A. Abbate; K.J. Han; I.V. Ostrovskii; P. Das

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
639 KB
Volume
36
Category
Article
ISSN
0038-1101

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Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an