Application of deep-level transient spectroscopy for monitoring point defects in III–V semiconductors

✍ Scribed by P. Kamiński

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 272 KB
• Volume: 20
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90431-l

✦ Synopsis

Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration and these traps are tentatively identified as TeA~GaAsTeAs and QTeA~ complexes respectively. The concentrations of 0.24 eV and 0.44 eV electron traps detected in GaP:N,S are dependent on the growth temperature and these traps are attributed to P vacancies and the ((Np)2VG,) complex respectively.