✦ LIBER ✦

Electronic states of selected deep level defects in III–V semiconductors

✍ Scribed by L.A. Hemstreet

Publisher: Elsevier Science
Year: 1983
Weight: 339 KB
Volume: 116
Category: Article
ISSN: 0378-4363
DOI: 10.1016/0378-4363(83)90237-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Application of deep-level transient spec

Application of deep-level transient spectroscopy for monitoring point defects in III–V semiconductors

✍ P. Kamiński 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 272 KB

Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an

Pairs of intrinsic defects in III–V semi

Pairs of intrinsic defects in III–V semiconductors: Electronic states and interaction energies

✍ T.L. Reinecke 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 239 KB

Studies of deep-level defects at III–V h

Studies of deep-level defects at III–V heterointerfaces

✍ P. Krispin 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 515 KB

Electronic density of states of amorphou

Electronic density of states of amorphous III–V semiconductors

✍ J.D. Joannopoulos; Marvin L. Cohen 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 360 KB

The effective-mass nature of deep-level

The effective-mass nature of deep-level point-defect states in semiconductors

✍ S.T. Pantelides; N.O. Lipari; J. Bernholc 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 383 KB

Effects of deep level defects in semicon

Effects of deep level defects in semiconductor detectors

✍ G. Lutz 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 743 KB