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Dispersive microwave transient spectroscopy of deep levels in semiconductors

✍ Scribed by D. Huber; P. Eichinger; G. Ferenczi; T. Pavelka; G. Veszely

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
233 KB
Volume
4
Category
Article
ISSN
0921-5107

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Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an