Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

✍ Scribed by Dalibor, T. ;Pensl, G. ;Matsunami, H. ;Kimoto, T. ;Choyke, W. J. ;Schöner, A. ;Nordell, N.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 419 KB
• Volume: 162
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0