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Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

✍ Scribed by M. Gassoumi; J.M. Bluet; G. Guillot; C. Gaquière; H. Maaref

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
624 KB
Volume
28
Category
Article
ISSN
0928-4931

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This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce