Characterization of high fluence neutron induced defect levels in high resistivity silicon detectors using a laser deep level transient spectroscopy (L-DLTS)

✍ Scribed by Li Chengji; Zheng Li

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 578 KB
• Volume: 342
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/0168-9002(94)91420-6