Study of deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells

✍ Scribed by N. Christoforou; J.D. Leslie; S. Damaskinos

• Publisher: Elsevier Science
• Year: 1989
• Weight: 906 KB
• Volume: 26
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(89)90081-1

✦ Synopsis

This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of concentration 5 × 1014 cm -3 which is located 0.7 eV above the valence band edge and an electron trap of concentration 5 × 1013 cm -3 which is located 0.35 eV below the conduction band edge. Simulation studies show that the width and shape of the DLTS spectra for the hole trap can be explained only if the hole trap is distributed in energy from 0.65 to 0.75 eV, but it is not possible to determine uniquely the exact distribution. The electron trap at 0.35 eV is not distributed in energy. Simulation studies also show the relation between the energy location of a trap and the resulting behaviour of the junction capacitance with temperature.