This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce
Deep level study of CdS/CuInSe2 solar cells
β Scribed by V. Ramanathan; R.C. Powell; S.K. Deb; R. Noufi
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 114 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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π SIMILAR VOLUMES
The short-wavelength spectral response of a thin film CuInSe2 device is improved by a thin (~ 500 A) undoped CdS layer and a 1 pm ZnO conducting window layer. The ZnO acts as an antireflection coating and permits photons of wavelength above 360 nm to be absorbed in the CuInSe2. A 25% photocurrent en
Simple thermodynamic arguments are used to investigate the oxidation of CuInSe 2 and the possible chemical reactions at the CdS-CuInSe2 interface. Reaction products are predicted for the oxidation of CuInSe 2 and the oxidation of CdS and for reactions between CdS and CuInSe2, as well as between CdS
Current-voltage (J-V) and capacitance-frequency (C-F) measurements were taken for all-sputtered CdS/CuInSe2 solar cell heterojunctions, in the range 100 Hz -10 MHz, to investigate the effect of interface states on the conduction mechanism. The samples analyzed had different compositions for the chal