Electrical characterization of all-sputtered CdS/CuInSe2 solar cell heterojunctions

✍ Scribed by J. Santamaria; I. Martil; E. Iborra; G. Gonzalez Diaz; F. Sanchez Quesada

• Publisher: Elsevier Science
• Year: 1990
• Weight: 390 KB
• Volume: 28
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(90)90036-5

✦ Synopsis

Current-voltage (J-V) and capacitance-frequency (C-F) measurements were taken for all-sputtered CdS/CuInSe2 solar cell heterojunctions, in the range 100 Hz -10 MHz, to investigate the effect of interface states on the conduction mechanism. The samples analyzed had different compositions for the chalcopyrite CuInSe2 layer. All of the samples showed a hybrid tunneling/interface recombination mechanism with the major contribution coming from the interface recombination mechanism for devices having a stoichiometric or indium-rich CuInSe2 layer, and from the tunneling conduction mechanism for copper-rich devices.

An estimation of the relative distribution of interface states has been performed. The values obtained for interface state density were as high as 6 X 1012 V -1 cm -2 for copper-rich heterojunctions, and were lower than 2 × 1011 V -1 cm -2 for devices having a stoichiometric or indium-rich CuInSe2 layer.