This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce
โฆ LIBER โฆ
Evidence of deep levels in crystalline CuInSe2
โ Scribed by C.X. Qiu; I. Shih
- Publisher
- Elsevier Science
- Year
- 1986
- Weight
- 301 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0379-6787
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