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On the determination of the defect parameters of repulsive centers by deep level transient spectroscopy

✍ Scribed by G. Huylebroeck; P. Clauws; J. Vennik


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
472 KB
Volume
33
Category
Article
ISSN
0038-1101

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We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum-and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application