The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

✍ Scribed by Zhensheng Tao; Ning Zhan; Hongbin Yang; Yan Ling; Zhenyang Zhong; Fang Lu

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 674 KB
• Volume: 255
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.09.098