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The study of the influence of deep level defects on GaAs epilayer electrophysical parameters with electron beam and photoelectron paramagnetic resonance methods

✍ Scribed by Dr N. T. Bagraev; Dr S. G. Konnikov; Dr A. B. Raitsin; M. M. Sobolev


Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
293 KB
Volume
20
Category
Article
ISSN
0232-1300

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