Studies of the dislocation-induced deep levels in CdS using deep level transient spectroscopy with optical excitation
β Scribed by Istratov, A. A.
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 136 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce
We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum-and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application