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Deep level optical spectroscopy of the levels introduced by transition metals in GaAs

✍ Scribed by F. Litty; P. Leyral; S. Loualiche; A. Nouailhat; G. Guillot; M. Lannoo

Publisher
Elsevier Science
Year
1983
Weight
215 KB
Volume
117-118
Category
Article
ISSN
0378-4363

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Deep level transient spectroscopy of tra
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The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional