Deep level transient spectroscopy of tra
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P. Clauws; J. Van Gheluwe; J. Lauwaert; E. Simoen; J. Vanhellemont; M. Meuris; A
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Article
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2007
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Elsevier Science
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English
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The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional