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A deep-level transient spectroscopy study of transition metals in n-type germanium

โœ Scribed by S. Forment; J. Vanhellemont; P. Clauws; J. Van Steenbergen; S. Sioncke; M. Meuris; E. Simoen; A. Theuwis


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
181 KB
Volume
9
Category
Article
ISSN
1369-8001

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Deep level transient spectroscopy of tra
โœ P. Clauws; J. Van Gheluwe; J. Lauwaert; E. Simoen; J. Vanhellemont; M. Meuris; A ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 190 KB

The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional