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Isothermal deep-level transient spectroscopy study of metastable defects in hydrogen-implanted n-type silicon

โœ Scribed by Yutaka Tokuda; Wakana Nakamura; Hiroshi Terashima


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
144 KB
Volume
9
Category
Article
ISSN
1369-8001

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