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Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon

✍ Scribed by C. Jagadish; B.G. Svensson; N. Hauser; J.S. Williams

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 249 KB
Volume: 222
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(92)90062-g

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