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Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition

โœ Scribed by Neerushana Jehanathan; Martin Saunders; Yinong Liu; John Dell


Book ID
113896839
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
449 KB
Volume
57
Category
Article
ISSN
1359-6462

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Plasma-enhanced chemical vapour deposite
โœ S. Ghosh; D. N. Bose ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Springer US ๐ŸŒ English โš– 421 KB

Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 ยฐC by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RB