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Deposition of silicon carbide films by plasma enhanced chemical vapour deposition

✍ Scribed by J Ramirez; H Suhr; L Szepes; L Zanathy; A Nagy

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
692 KB
Volume
514
Category
Article
ISSN
0022-328X

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πŸ“œ SIMILAR VOLUMES

Plasma-enhanced chemical vapour depositi
Plasma-enhanced chemical vapour deposition of fluorinated silicon dioxide films using novel alkylsilanes
✍ Ravi K. Laxman; Arthur K. Hochberg; David A. Roberts; Raymond N. Vrtis; Saul Ova πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 530 KB

Deposition processes and film properties of plasma-enhanced chemical vapour deposition (PECVD) films derived from fluoroalkylsilanes are described. The fluorinated silicon dioxide (FSG) films have lower dielectric constants (3.3-3.7) than non-fluorinated silicon dioxide films (>4). With similar diel