Plasma-enhanced chemical vapour deposition of fluorinated silicon dioxide films using novel alkylsilanes

✍ Scribed by Ravi K. Laxman; Arthur K. Hochberg; David A. Roberts; Raymond N. Vrtis; Saul Ovalle

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 530 KB
• Volume: 6
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199603)6:2<93::aid-amo231>3.0.co;2-z

✦ Synopsis

Deposition processes and film properties of plasma-enhanced chemical vapour deposition (PECVD) films derived from fluoroalkylsilanes are described. The fluorinated silicon dioxide (FSG) films have lower dielectric constants (3.3-3.7) than non-fluorinated silicon dioxide films (>4). With similar dielectric strengths, the reduced capacitance obtained with FSG films makes them useful as intermetal dielectrics (IMDs). The films are characterised using Fourier transform infrared spectroscopy, Auger electron spectroscopy, ellipsometry and capacitance-voltage measurements. Characterisation of the changes in FSG upon exposure to ambient conditions and a method for stabilising the films are presented KEYWORDS fluorinated silicon dioxide;