Plasma-enhanced chemical vapor deposition of 99.95% 28Si in form of nano- and polycrystals using silicon tetrafluoride precursor

✍ Scribed by P. Sennikov; D. Pryakhin; B. Andreev; L. Gavrilenko; Yu. Drozdov; M. Drozdov; H.-J. Pohl; V. Shashkin

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 122 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000088

✦ Synopsis

Abstract

The process of plasma chemical deposition of silicon was investigated from its tetrafluoride containing 99.99% of ^28^Si isotope in the form of thin layer of nano‐crystalline silicon on silicon substrate and of thick layer of polycrystalline silicon on the inner surface of quartz reactor. The layers are characterized by the methods of X‐ray diffraction and Raman spectroscopy. Using the SIMS method the mechanism of isotopic dilution was investigated in the PECVD process (the content of ^28^Si isotope in layers was 99.95‐99.98%). A necessity is indicated in thorough special preparation of the reactor for minimization of isotopic dilution in case of fabrication of silicon containing ≥99.9% of ^28^Si. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)