Plasma-enhanced chemical vapour deposited silicon-nitride films for interface studies

✍ Scribed by S. Ghosh; D. N. Bose

• Publisher: Springer US
• Year: 1994
• Tongue: English
• Weight: 421 KB
• Volume: 5
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00186184

✦ Synopsis

Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 °C by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RBS) measurements. Optical, electrical and interface characterization were carried out for the films. It was observed that nitrogen-rich films (x--1.63) gave the best electrical properties and the lowest interface state density, which was 111 x 1011 eV -1 cm -2. The resistivity and breakdown field of these films were 5.1 x 1013 ~'~cm and 1.5 x 10 e V cm-1, respectively.