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Heating effect in plasma-enhanced chemical vapour deposition of silicon nitride

โœ Scribed by I. K. Han; Y. J. Lee; J. H. Jo; J. I. Lee; K. N. Kang


Publisher
Springer
Year
1991
Tongue
English
Weight
232 KB
Volume
10
Category
Article
ISSN
0261-8028

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Plasma-enhanced chemical vapour deposite
โœ S. Ghosh; D. N. Bose ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Springer US ๐ŸŒ English โš– 421 KB

Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 ยฐC by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RB