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Electron spectroscopy of plasma-enhanced chemical vapour deposited silicon nitride films

โœ Scribed by S. Azimi-Nam; T. Hashemi; F. Golestani-Fard

Publisher
Springer
Year
1987
Tongue
English
Weight
334 KB
Volume
6
Category
Article
ISSN
0261-8028

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Plasma-enhanced chemical vapour deposite
Plasma-enhanced chemical vapour deposited silicon-nitride films for interface studies
โœ S. Ghosh; D. N. Bose ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Springer US ๐ŸŒ English โš– 421 KB

Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 ยฐC by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RB