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Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

✍ Scribed by Ouennoughi, Z.; Strenger, C.; Bourouba, F.; Haeublein, V.; Ryssel, H.; Frey, L.

Book ID: 120540307
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 982 KB
Volume: 53
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2013.06.009

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