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Walk-out phenomena in 6H-SiC mesa diodes with SiO2/Si3N4 passivation and charge trapping in dry and wet oxides on N-type 6H-SiC

✍ Scribed by M. Bakowski; U. Gustafsson; Z. Ovuka


Book ID
108362218
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
404 KB
Volume
38
Category
Article
ISSN
0026-2714

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