High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

✍ Scribed by Gudjonsson, G.; Olafsson, H.O.; Allerstam, F.; Nilsson, P.-A.; Sveinbjornsson, E.O.; Zirath, H.; Rodle, T.; Jos, R.

• Book ID: 120509642
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 123 KB
• Volume: 26
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2004.841191