We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m 2 =V s. Fractional quantum Hall states at ΓΏrst-and second-order ΓΏlling factors, and up to = 11 3 , are observed. Shubnikovde Haas oscillations of high-density samples reveal that
Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells
β Scribed by K.-J Friedland; R Hey; O Bierwagen; H Kostial; Y Hirayama; K.H Ploog
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 133 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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We examined the electrical properties of modulation-doped CdS/ZnSe single quantum wells grown by molecular beam epitaxy. The n-doping was performed in the ZnSe barrier material to realize a two-dimensional electron gas (2DEG) in the CdS quantum well (QW). With van de Pauw and Hall bar measurements w
Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a AlxGal\_xAs/GaAs/AlxGal\_xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily contro