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Temperature dependence of electron mobility in GaAs/GaAlAs modulation doped quantum wells

✍ Scribed by C. Guillemot; M. Baudet; M. Gauneau; A. Regreny; J.-C. Portal


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
273 KB
Volume
2
Category
Article
ISSN
0749-6036

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High-mobility electrons in modulation-do
✍ E.P. De Poortere; Y.P. Shkolnikov; M. Shayegan πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 83 KB

We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m 2 =V s. Fractional quantum Hall states at ΓΏrst-and second-order ΓΏlling factors, and up to = 11 3 , are observed. Shubnikovde Haas oscillations of high-density samples reveal that