Electron distribution in modulation doped AlGaAs/GaAs single quantum wells and inverted modulation doped GaAs/AlGaAs heterostructures
β Scribed by Kyoichi Suzuki; Ken Saito; Tadashi Saku; Akira Sugimura; Yoshiji Horikoshi; Syoji Yamada
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 305 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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Magneto-optical properties and resonant Raman spectroscopy of modulation doped GaAs-AlGaAs quantum well wires are reported. Their properties are compared with similar undoped quantum well wires to investigate the many electron effects in nanostructures. In undoped samples, the quantised energy level
We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The resu