Carrier spin polarization near the Fermi level inn-modulation doped AlGaAs/InGaAs/GaAs quantum well
✍ Scribed by A.L.C. Triques; F. Iikawa; J.A. Brum; M.Z. Maialle; R.G. Pereira; G. Borghs
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 74 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization.