๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Optical emission and Raman scattering in modulation-doped gaAs-AlGaAs quantum wires and dots

โœ Scribed by P.D. Wang; Y.P. Song; C.M.Sotomayor Torres; M.C. Holland; D.J. Lockwood; P. Hawrylak; J.J. Palacios; P.C.M. Christianen; J.C. Maan; J.A.A.J. Perenboom


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
204 KB
Volume
15
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

โœฆ Synopsis


Magneto-optical properties and resonant Raman spectroscopy of modulation doped GaAs-AlGaAs quantum well wires are reported. Their properties are compared with similar undoped quantum well wires to investigate the many electron effects in nanostructures. In undoped samples, the quantised energy levels observed by luminescence excitation spectroscopy are in good agreement with a particle-in-a-box model. In doped samples, the carrier confinement is explicitly revealed by magnetoluminescence and depolarised resonant Raman scattering. The calculated spectra in a Hartree model are in reasonable agreement with experiment.


๐Ÿ“œ SIMILAR VOLUMES


Optical emission from the one-dimensiona
โœ J. Wagner; D. Behr; D. Richards; T. Bickl; A. Forchel; M. Emmerling; K. Kรถhler ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 198 KB

We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped \(\mathrm{GaAs} /(\mathrm{InGa}) \mathrm{As} /(\mathrm{AlGa}) \mathrm{As}\) quantum well structure, as used in inverted high electron mobility transistors. Lateral