Optical emission and Raman scattering in modulation-doped gaAs-AlGaAs quantum wires and dots
โ Scribed by P.D. Wang; Y.P. Song; C.M.Sotomayor Torres; M.C. Holland; D.J. Lockwood; P. Hawrylak; J.J. Palacios; P.C.M. Christianen; J.C. Maan; J.A.A.J. Perenboom
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 204 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0749-6036
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โฆ Synopsis
Magneto-optical properties and resonant Raman spectroscopy of modulation doped GaAs-AlGaAs quantum well wires are reported. Their properties are compared with similar undoped quantum well wires to investigate the many electron effects in nanostructures. In undoped samples, the quantised energy levels observed by luminescence excitation spectroscopy are in good agreement with a particle-in-a-box model. In doped samples, the carrier confinement is explicitly revealed by magnetoluminescence and depolarised resonant Raman scattering. The calculated spectra in a Hartree model are in reasonable agreement with experiment.
๐ SIMILAR VOLUMES
We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped \(\mathrm{GaAs} /(\mathrm{InGa}) \mathrm{As} /(\mathrm{AlGa}) \mathrm{As}\) quantum well structure, as used in inverted high electron mobility transistors. Lateral