Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/(InGa)As/(AlGa)As quantum wires fabricated by lateral top barrier modulation
✍ Scribed by J. Wagner; D. Behr; D. Richards; T. Bickl; A. Forchel; M. Emmerling; K. Köhler
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 198 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped (\mathrm{GaAs} /(\mathrm{InGa}) \mathrm{As} /(\mathrm{AlGa}) \mathrm{As}) quantum well structure, as used in inverted high electron mobility transistors. Lateral patterning was performed by electron beam lithography followed by a selective wet etch process to remove the (n)-type doped GaAs top barrier between the wire regions. The removal of the top barrier was verified by micro-Raman spectroscopy. Spatially indirect emission from the one-dimensional (1D) electron gas formed in the quantum wires is observed in low-temperature photoluminescence, even for the narrowest geometrical wire width of (23 \mathrm{~nm}). The emission shows a blue-shift for wire widths below (100 \mathrm{~nm}), which amounts to up to (60 \mathrm{meV}) for the narrowest wires.