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High-mobility electrons in modulation-doped AlAs quantum wells

✍ Scribed by E.P. De Poortere; Y.P. Shkolnikov; M. Shayegan

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 83 KB
Volume: 13
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00208-4

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✦ Synopsis

We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m 2 =V s. Fractional quantum Hall states at ÿrst-and second-order ÿlling factors, and up to = 11 3 , are observed. Shubnikovde Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.

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