Mobility Limitations by Interface Scattering in Modulation-Doped CdS/ZnSe Single Quantum Wells

✍ Scribed by M. Dremel; M. Grün; M. Schmidt; C. Klingshirn

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 88 KB
• Volume: 229
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200201)229:1<97::aid-pssb97>3.0.co;2-f

✦ Synopsis

We examined the electrical properties of modulation-doped CdS/ZnSe single quantum wells grown by molecular beam epitaxy. The n-doping was performed in the ZnSe barrier material to realize a two-dimensional electron gas (2DEG) in the CdS quantum well (QW). With van de Pauw and Hall bar measurements we determined the specific resistivity, the charge carrier density and the carrier mobility of the heterostructures. The strong dependence of the results of degenerately doped structures on the doping concentration and on the well thickness can be explained by a parallel layer conduction model. Limitations of the charge carrier mobility in these structures are due to scattering at the interface roughness and alloy disorder in the QW as well as ionic and piezo scattering in the doped layers.