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Tunneling time of electrons in modulation n- doped GaAlAsGaAsAlAs quantum wells

✍ Scribed by C. López; F. Meseguer; J. Sánchez-Dehesa; W.W. Rühle; K. Ploog


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
318 KB
Volume
10
Category
Article
ISSN
0749-6036

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Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier loc