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Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

✍ Scribed by M. Yılmaz; Y. Sun; N. Balkan; B. Ulug; A. Ulug; M. Sopanen; O. Reentilä; M. Mattila; C. Fontaine; A. Arnoult

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
282 KB
Volume
40
Category
Article
ISSN
0026-2692

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✦ Synopsis

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-typedoped material.

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In pulsed high magnetic fields up to 40 T perpendicular to layers, we investigated photoluminescence (PL) from quasizero-dimensional carriers in modulation-doped GaAs/A1GaAs quantum wells for various electron densities at 77 K. We observed an oscillation of PL intensity due to magnetophonon resonanc