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A study of band-gap renormalization in N- and P- type modulation doped GaAs-quantum wells

✍ Scribed by S. Haacke; R. Zimmermann; D. Bimberg; D.E. Mars; J.N. Miller

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
279 KB
Volume
9
Category
Article
ISSN
0749-6036

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Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier loc