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Magnetophonon oscillation in photoluminescence spectra of modulation-doped GaAs/AlGaAs quantum wells at high magnetic fields

✍ Scribed by N. Kamata; E. Kanoh; K. Yamada; N. Miura

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
238 KB
Volume
201
Category
Article
ISSN
0921-4526

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✦ Synopsis

In pulsed high magnetic fields up to 40 T perpendicular to layers, we investigated photoluminescence (PL) from quasizero-dimensional carriers in modulation-doped GaAs/A1GaAs quantum wells for various electron densities at 77 K. We observed an oscillation of PL intensity due to magnetophonon resonance well resolved from the ordinary inter-Landau level resonance. The resonance fields were in a good agreement with a self-consistent calculation of the hole subband energy.

* Corresponding author.

The MD GaAs/AIGaAs QW samples were grown by molecular beam epitaxy on a GaAs substrate [4,1. They

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