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Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices

โœ Scribed by M.G. Bezerra; J.A.K. Freire; V.N. Freire; G.A. Farias; F.M.S. Lima; A.L.A. Fonseca; O.A.C. Nunes

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
91 KB
Volume
36
Category
Article
ISSN
0026-2692

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Single quantum well transistor with modu
Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures
โœ K. Miyatsuji; H. Hihara; C. Hamaguchi ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 291 KB

Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a AlxGal\_xAs/GaAs/AlxGal\_xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily contro