Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures

✍ Scribed by K. Miyatsuji; H. Hihara; C. Hamaguchi

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 291 KB
• Volume: 1
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(85)90027-8

✦ Synopsis

Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a AlxGal_xAs/GaAs/AlxGal_xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily controlled by an external gate voltage applied between the AIGaAsbarriers, indicating a capability of fabricating a novel quantum well device, a modulation-doped single quantum well transistor.