✦ LIBER ✦

Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

✍ Scribed by K. Chatty; T. P. Chow; R. J. Gutmann; E. Arnold; D. Alok

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Conduction mechanisms in thermal nitride

✍ Ouennoughi, Z.; Strenger, C.; Bourouba, F.; Haeublein, V.; Ryssel, H.; Frey, L. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 982 KB

P-Channel MOSFETs on 4H-SiC {0001} and N

✍ Noborio, M.; Suda, J.; Kimoto, T. 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 222 KB

Charge trapping in dry and wet oxides on

✍ Stein von Kamienski, E. G.; Portheine, F.; Stein, J.; Golz, A.; Kurz, H. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 334 KB

Walk-out phenomena in 6H-SiC mesa diodes

✍ M. Bakowski; U. Gustafsson; Z. Ovuka 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 404 KB

The Effect of Gate Oxide Processes on th

✍ Wang, Y.; Tang, K.; Khan, T.; Koushik Balasubramanian, M.; Naik, H.; Wei Wang; C 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 840 KB

Comparative study of gate oxide in 4H-Si

✍ P. Fiorenza, L. K. Swanson, M. Vivona, F. Giannazzo, C. Bongiorno… 📂 Article 📅 2013 🏛 Springer 🌐 English ⚖ 807 KB