✦ LIBER ✦

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

✍ Scribed by P. Fiorenza, L. K. Swanson, M. Vivona, F. Giannazzo, C. Bongiorno…

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Correlating macroscopic and nanoscale el

✍ Swanson, L. K.; Fiorenza, P.; Giannazzo, F.; Frazzetto, A.; Roccaforte, F. 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 827 KB

[IEEE Conference on Electron Devices, 20

✍ Perez-Tomas, A.; Godignon, P.; Mestres, N.; Tournier, D.; Millan, J. 📂 Article 📅 2005 🏛 IEEE ⚖ 523 KB