P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and Annealing

✍ Scribed by Noborio, M.; Suda, J.; Kimoto, T.

• Book ID: 114619694
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 222 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2025909