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Chemically amplified resists for high-resolution lithography

✍ Scribed by S. A. Bulgakova, M. M. Jons, A. E. Pestov, M. N. Toropov…

Book ID
120772762
Publisher
Springer
Year
2013
Tongue
English
Weight
316 KB
Volume
42
Category
Article
ISSN
1063-7397

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High resolution electron beam lithograph
High resolution electron beam lithography studies on Shipley chemically amplified DUV resists
✍ D. Macintyre; S. Thoms 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 271 KB

The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV