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Chemically amplified molecular resists for e-beam lithography

โœ Scribed by F.P. Gibbons; J. Manyam; S. Diegoli; M. Manickam; J.A. Preece; R.E. Palmer; A.P.G. Robinson

Book ID
111713383
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
376 KB
Volume
85
Category
Article
ISSN
0167-9317

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High resolution electron beam lithograph
High resolution electron beam lithography studies on Shipley chemically amplified DUV resists
โœ D. Macintyre; S. Thoms ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 271 KB

The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV